• Equity PC Ratio   0.57
  • |
  • Index PC Ratio   1.14
  • |
  • Total PC Ratio   0.97
  • |
  • VIX PC Ratio   0.54
  • VIX 12.05
  • VXN 14.57
  • VXO 12.36
  • ISEE 85.00

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Company Profile

MoSys, Inc. designs, develops, markets, and licenses embedded memory intellectual property (IP) used by the semiconductor industry and communications, networking, and storage equipment manufacturers. It offers a patented semiconductor memory technology, 1T-SRAM, which offers a combination of high density, low power consumption, high speed, and low cost; and licenses this technology to companies that incorporate or embed memory on integrated circuits (ICs), such as system-on-chips. The company also designs, develops, markets, and licenses high-speed parallel and serial interface IP, which includes physical layer circuitry that allows ICs to communicate with each other or to discrete memory devices in networking, storage, computer, and consumer devices. In addition, it supports serial I/O technologies, such as 10G KR, XAUI, PCI Express, and SATA, as well as parallel interfaces comprising DDR3. Further, the company engages in researching and developing embedded non-volatile memory solution, 1T-Flash, for smaller process geometries. It offers its memory and I/O technologies to semiconductor companies, electronic product manufacturers, foundries, intellectual property companies, and design companies through product development, technology licensing, and joint marketing relationships. MoSys, Inc. has operations in Japan, the United States, Taiwan, rest of Asia, and Europe. The company was founded in 1991 and is headquartered in Sunnyvale, California.

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